TSMC makes SRAMs in three 28-nm processes
LONDON — Foundry chipmaker Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan) has claimed it has achieved a functionally yielding 64-Mbit SRAMs across all three versions of its upcoming 28-nm manufacturing process technology. These are 28-LP, with an oxynitride dielectric, and 28-HP and 28-HLP which both uses a high-K metal gate process. The 28-nm LP process will serve as a fast time-to-market and low-cost technology suitable for cellular and mobile applications. The 28-nm HP process is expected to support devices such as CPUs, GPUs, chipsets, FPGAs, networking, video game consoles, and mobile computing applications that are performance demanding. The 28-nm HPL process is aimed to support applications such as cell phones, netbooks, wireless communications and portable consumer electronics.
"Achieving 64Mb SRAM yield across all three 28nm process nodes is striking. It is particularly noteworthy because this achievement demonstrates the manufacturing benefits of the gate-last approach that we developed for the two TSMC 28-nm high-k metal gate processes," said Jack Sun, vice president of R&D for TSMC, in a statement.
"This accomplishment underscores TSMC's process technology capability and value in 28nm. It shows TSMC is not only able to extend conventional SiON technology to 28nm, but is also able to deliver the right 28nm HKMG technology at the same time," claimed Mark Liu, senior vice president of advanced technology business at TSMC, in the same statement.
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