Samsung tips 28-nm, low-power process

June 6, 2011

SAN FRANCISCO—South Korea's Samsung Electronics Co. Ltd. said Monday (June 6) that its foundry business, Samsung Foundry, has qualified its 28-nm low-power (LP) process with high-k metal gate technology and is ready for production.  

Samsung said its 28-nm LP process delivers a 35 percent reduction in active and standby power at the same frequency or 30 percent performance boost at the same leakage compared to the company's 45-nm LP process.

Samsung also added a new variant to its advanced process technology roadmap, 28-nm LPH high-k metal gate process technology. Samsung (Seoul, South Korea) said its Samsung’s 28-nm LP and LPH process technologies offer designers comprehensive solutions to keep pace with the challenges of exploding bandwidth, advanced integrated functionality and low-power constraints.

The 28-nm LPH process has been specifically developed for mobile device applications that can deliver more than 2 GHz processing performance, Samsung said. The. 28-nm LPH offers 60 percent of active power reduction at the same frequency or 55 percent of performance boost at the same leakage over 45nm LP SoC designs, the company said. Process shuttles for the. 28-nm LPH process are available now, Samsung said.