Tin-based Stanene one-ups graphene for nextgen ICs
PORTLAND, Ore. -- A team of researchers led by Stanford University professor Shoucheng Zhang now have high hopes that a new material they call stanene will conduct electricity on next-generation microchips with "100 percent efficiency" at room temperature and above.
The team, including researchers at Stanford University and the US Department of Energy’s (DoE's) SLAC National Accelerator Laboratory, both in Menlo Park, Calif., named their new tin-based material stanene to liken it to graphene (plus the prefix of the Latin term for tin, stannum). However, instead of being based on atomically thin two-dimensional (2D) monolayers of carbon as is graphene, stanene is based on monolayers of tin. And while they are careful not to call it a room-temperature superconductor, it nevertheless has striking similarities.
In practice, stanene interconnection lines will behave like dual side-by-side superconducting wires, since each ribbon of stanene will support two lanes of zero resistance data traffic -- one on each edge. The only resistance offered by a stanene interconnection line would be at the end points where a contact must be made with the traditional on-chip circuitry.
"The key difference is that with a normal conductor, the total resistance scales linearly with the length -- the longer the wire the larger the resistance," said Zhang. "But for stanene the only resistance is the contact, so the total resistance of a line is constant regardless of the wire's length."
To read more, go to “Experimental confirmation.”