The latest family of mobile DDR memory devices from Micron Technology are built with the company's Endur-IC technology, which is specifically designed for mobile systems. An enhanced feature set delivers aggressive power specs, excellent bandwidth performance, and increased reliability compared to standard DRAM. The memory products exceed the current Joint Electron Device Engineering Council (JEDEC) standard and provide shorter latency, higher speeds, full page burst, multiple addressing options, and a low standby current. Micron leverages its stacked DRAM process technology to achieve the complete industrial temperature range, -40 to +85 degrees Celsius. The DDR parts demonstrate immunity to failures arising during the manufacturing and packaging processes, making them the suitable for die-based applications, multichip packages (MCPs), systems-in-a-package (SiPs), Package on Package (PoP) and other stacked solutions.
Several configurations of the mobile DDR devices are available 128 Mbits in by-16 and 512 Mbits in by-16 or by-32 configurations. The 256-Mbit devices will come in the second half of this year. Visit www.micron.com/mobileddrfor more information.