IMEC and National Semiconductor are jointly developing a 0.18-micron and follow-up generation of Silicon Germanium (SiGe)-based BiCMOS process technology optimized for low-power applications. The joint process development should enable National Semiconductor to provide a 0.18-micron SiGe-based BiCMOS process by December 2003 for its South Portland, Maine manufacturing facility. In the second phase of the four-year contract, IMEC and National Semiconductor plan to develop next-generation SiGe-based BiCMOS technology by the first half of 2005.
Since January 2002, IMEC and National have been jointly developing a 0.18-micron SiGe HBT (hetero-junction bipolar transistor) module for integration into National's existing high speed BiCMOS process family. Under terms of the non-exclusive agreement, IMEC will license its 0.18-micron SiGe HBT module to National along with the test chip structures and bipolar model.
National will integrate the SiGe HBT module into its existing 0.18-micron CMOS process without changes to the CMOS performance. A suite of radio frequency (RF) passive components such as spiral inductor, varactor, metal-insulator-metal (MIM) capacitor and poly-silicon resistors will also be integrated into the process.
The present version of the integrated 0.18-micron HBT module under development reaches an Ft x BVceo product exceeding 200, with 40 percent increase of Ft at low-current densities. The peak Fmax exceeds 100GHz.