LONDON Innos has been working with a project lead by Imperial College London that has demonstrated the potential for high-speed low power applications using strained-Si transistors. The project, funded by the EPSRC, studies the re-designing and fabricating of transistors for applications in medicine.
Innos (Southampton, U.K.) provides industry and academic institutions with a full processing capability for silicon-based devices including lithography capability to below 10nm, using a electron beam lithography system.
Dr Kristel Fobelets, Senior Lecturer at Imperial College London, said “Large foundries have a tendency to be very inflexible with respect to changes to standard fabrication processes. We decided to involve Innos because its facilities contain all the know-how and standard fabrication tools available, and was very flexible in terms of requirements. It also has strong links with the EPSRC. The personal relationship we built with Innos is strong and based on two-way communication and feedback.”
The project conducted by Imperial College London and facilitated by Innos in its cleanroom aimed to demonstrate the viability of the new transistors for applications in health monitoring, for example, diagnostic imaging, with a particular emphasis on home health monitoring.
The project tested the feasibility of the fabricated and newly designed strained-Si surface channel and buried channel Field-Effect-Transistor. It also demonstrated and characterised simple monolithically integrated circuits using strained-Si FETs and reduced temperatures.
Dr Alec Reader, Sales and Marketing Manager at Innos, added “The ability for Innos to react to changes in an otherwise static environment enabled Imperial College London to make some major breakthroughs with the new transistors. This is something that larger foundries just can’t respond to due to massive cost and time constraints. We have enjoyed a good relationship and are planning to work with Imperial College London again studying the screen-grid FET, a novel transistor structure invented by Dr Kristel Fobelets that again deviates from a traditional FET structure, something we are well positioned to investigate.”