Low Vce(sat) BJTs improve power efficiency and lower costs - Embedded.com

Low Vce(sat) BJTs improve power efficiency and lower costs

On Semiconductor introduced a family of high performance, Vce(sat) bipolar junction transistors (BJTs) that reduce overall circuit cost while contributing to better power efficiency and longer battery life. The BJTs are miniature surface-mount devices designed for use in low voltage, high-speed switching applications where affordable yet energy-efficient control is important. By applying improved silicon technology and advanced packaging, On Semi developed this series of small, cost-effective BJTs that deliver low saturation voltage performance equivalent to the RDS(on) performance of more expensive discrete solutions.

The BJTs offer high electrostatic discharge (ESD) tolerance and a low temperature coefficient. The devices can further reduce the overall bill of materials by reducing part count in certain applications. For example, by delivering a low turn-on voltage of less than 1.0 V, it may be possible to eliminate the typical charge pumps. They also enable the elimination of blocking diodes due to their bi-directional current blocking capability.

Various packages are available, including SOT-23, SC-88, SC-74, TSOP-6, and ChipFET. Prices range from $0.07 to $0.16 in 10,000 unit quantities. For additional information about the devices and ways to implement them, visit www.onsemi.com/tech.

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