MIT integrates InGaAs with silicon at 22-nm - Embedded.com

MIT integrates InGaAs with silicon at 22-nm

Integrating III-V transistors into 22-nm design flows may soon be possible, according to the Massachusetts Institute of Technology (MIT) researches who demonstrated indium-gallium arsenide (InGaAs) transistors at the International Electron Devices Meeting (IEDM) this week in San Francisco.

MIT demonstrated an indium gallium arsenide transistor that it claims can be shrunk to smaller dimensions than silicon.

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