PowerTrench MOSFETs provide higher power density, increased efficiency in SMPS designs - Embedded.com

PowerTrench MOSFETs provide higher power density, increased efficiency in SMPS designs

Fairchild Semiconductor has expanded its family of PowerTrench MOSFETs to help designers meet design challenges of switch-mode power supplies (SMPS). These challenges include power density, light-load efficiency, and synchronous rectification. The first devices available include the 40V FDMS015N04B and 80V FDMS039N08B in a Power56 package, and the 60V FDP020N06B and 80V FDP027N08B in a TO-220 3-lead package.

Part of the mid-voltage power MOSFET portfolio, these devices are optimized power switches that combine a small gate charge (QG), a small reverse recovery charge (Qrr) and a soft-reverse recovery body diode, allowing for fast switching speeds. Available in a 40V, 60V and 80V rating, these devices require less power dissipation in the snubber circuitry due to an optimized soft-body diode that reduces voltage spikes by up to 15 percent over the competitor’s solution.

Employing a shielded-gate silicon technology that provides charge balance, the devices achieve higher power density, low ringing and better light-load efficiency.The new devices achieve a lower figure of merit (QG x RDS[ON]) while reducing driving loss to increase power efficiency.

Summary of features

  • Smaller package size (Power56 and TO-220 3-lead) with maximum thermal performance to system size
  • Lower QG to reduce gate driving loss
  • Low QGD/QGS ratio to prevent undesirable turn-on improving system reliability
  • Low dynamic parasitic capacitances to reduce gate driving loss for high-frequency applications
  • 100% UIL tested
  • RoHS Compliant

Price: US $ in 1,000 quantity pieces
FDMS015N04B: $1.78
FDMS039N08B: $1.60
FDP020N06B: $4.50
FDP027N08B: $3.30

Datasheets:
FDMS015N04B
FDMS039N08B
FDP020N06B
FDP027N08B

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