LONDON Scottish Enterprise will provide £730,000 to assist in development work on advanced silicon chip technology being carried out at University of Glasgow.
The Ultrafast Group at the University of Glasgow’s Electronics and Electrical Engineering Department includes work by Professor Iain Thayne, and is supported by a major semiconductor manufacturer, to develop gallium arsenide MOSFETs, as a potential additional technology platform along with silicon.
Central to the success of this work is the development of nanoscale technology to measure the interaction, effectiveness and purity of the new compound materials at an atomic level. This is achieved through the use of active scanning capacitance microscopy technology, which is being developed by Professor John Weaver.
Another integral piece of the development is to understand the characteristics of these materials and devise the circuit technologies and CAD methodologies necessary to design the new GaAs MOSFET integrated circuits. Professor David Cumming is leading this development work at Glasgow University.
The work undertaken by Weaver and Cumming is expected to benefit from the three-year funding package agreed to by the Scottish Enterprise Micro and Opto Electronics Team.
Neil Francis, Scottish Enterprise Cluster Director for Micro and Opto Electronics, said, “The University of Glasgow is internationally recognised as a leader in the development of the new compound semiconductor technology that will ultimately provide the platform to deliver the step change in micro and opto electronics. Our assistance for this project fits with our strategy of supporting demand-led initiatives essential to our international competitiveness and our reputation as a global centre of innovative collaboration.”
Added Weaver, “Capacitance has been an unsolved key technology problem, as defined by the ITRS Roadmap, since around 1998 and we believe that with the Scottish Enterprise Funding we can solve it. The results will become immediately applicable to the semi-conductor industry and will be useful in all technologies, from ‘old fashioned’ silicon, to dielectrics and IIIV MOS.“