ST unveils high-performance integrated wideband RF synthesizer -

ST unveils high-performance integrated wideband RF synthesizer

STMicroelectronics has introduced the STW81200 RF synthesizer, which leverages ST’s BiCMOS (SiGe) manufacturing technology by integrating in one chip wideband voltage-controlled oscillators (VCOs), a dual fractional and integer phase-locked-loop (PLL) core, low-noise voltage regulators, plus a set of programmable hardware options to comply with a wide variety of RF requirements.

The STW81200 supports development of multi-band, multi-standard software-defined radios across the wide frequency range of 50MHz to 6GHz, while delivering normalized in-band phase-noise floor of -227 dBc/Hz, a VCO phase noise of -135 dBc/Hz @1MHz offset with a 4.0GHz carrier, and a noise floor of -160 dBc/Hz.

The STW81200 is unique in its ability to be powered from a single unregulated supply at 5V, 3.6V, or 3.0V and tuned in consumption and performance extending the application range from traditional mains-powered infrastructure to battery-powered devices.

The new synthesizer delivers higher performance and greater flexibility by ensuring the same board design can support multiple bands and RF standards (logistic). In addition, higher integration and a reduced Bill-of-Materials deliver greater savings.

The STW81200 is entering volume ramp-up now. ST is currently sampling evaluation kits of the chip in 6×6 quad flat packs.

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