Winbond: NOR+NAND dual-die memory chip now supports NXP Layerscape LS1012A

Winbond Electronics announced that its SpiStack dual-die NOR+NAND code storage product has been included on NXP Semiconductors FRWY-LS1012A board for use with its Layerscape LS1012A communications processor. NXP chose Winbond’s W25M161AW SpiStack product for its new FRWY-LS1012A development board for the LS1012A processor. The W25M161AW provides 16Mbits of serial NOR Flash memory for the board’s boot code, and 1Gbit of serial NAND for its Linux operating system.

The stacked-die construction of the SpiStack products and the software Chip Select capability developed by Winbond enable a serial NOR Flash die for fast boot and a serial NAND die for high memory density to be accommodated in an 8-terminal WSON package with a standard 8mm x 6mm footprint and pin-out.

Visitors to Winbond’s booth at the Flash Memory Summit can also view demonstration systems exhibiting the industry-best Read performance of its W25N01JW High Performance Serial NAND product. The W25N01JW offers a new high data-transfer rate of 83MB/s via a Quad Serial Peripheral Interface (QSPI). Winbond’s new High-Performance Serial NAND technology also supports a two-chip dual-quad interface which gives a maximum data transfer rate of 166MB/s.

This high-speed Read operation, some four times faster than existing serial NAND memory devices offer, means that the new W25N01JW chip can replace SPI NOR Flash memory in automotive applications such as data storage for instrument clusters or the Center Information Display (CID).

This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of 7” and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher. At these capacities, serial NAND Flash has a markedly lower unit cost than SPI NOR Flash, and occupies a smaller board area per Mbit of storage capacity.

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